01/99 b-17 2n4867, 2n4867a, 2n4868, 2n4868a, 2n4869, 2n4869a n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 40 v gate current 50 ma continuous device power dissipation 300mw power derating 1.7 mw/c storage temperature range C 65c to + 200c toe72 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate, 4 case surface mount smp4867, smp4867a, smp4868, SMP4868A, smp4869, smp4869a 2n4867 2n4868 2n4869 at 25c free air temperature: 2n4867a 2n4868a 2n4869a process nj16 static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss C 40 C 40 C 40 v i g = C 1a, v ds = ? v gate reverse current i gss C 0.25 C 0.25 C 0.25 na v gs = C 30 v, v ds = ? v C 0.25 C 0.25 C 0.25 a v gs = C 30 v, v ds = ? v t a = 150c gate source cutoff voltage v gs(off) C 0.7 C 2 C 1 C 3 C 1.8 C 5 v v ds = 20 v, i d = 1 a drain saturation current (pulsed) i dss 0.4 1.2 1 3 2.5 7.5 ma v ds = 20 v, v gs = ? v dynamic electrical characteristics common source forward g fs 700 2000 1000 3000 1300 4000 s v ds = 20 v, v gs = ?v f = 1 khz transconductance common source output conductance g os 1.5 4 10 s v ds = 20 v, v gs = ?v f = 1 khz common source input capacitance c iss 25 25 25 pf v ds = 20 v, v gs = ?v f = 1 mhz common source reverse c rss 555pfv ds = 20 v, v gs = ?v f = 1 mhz transfer capacitance equivalent short circuit e n 20 20 20 nv/ hz v ds = 10 v, v gs = ?v f = 10 hz input noise voltage 10 10 10 nv/ hz v ds = 10 v, v gs = ?v f = 1 khz v ds = 10 v, v gs = ?v f = 1 khz noise figure nf 1 1 1 db (2n4867, 68, 69) r g = 20 k (2n4867a, 68a, 69a) r g = 5 k audio amplifiers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/14/99 12:00 pm page b-17
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